| 摘要 |
<p>CHARGE-COUPLED DEVICE A charge coupled device of nonvolatile type having a semiconductor substrate (1), an insulating layer (3), a plurality of electrodes (4, 5), and a semiconductor layer (2) between the surface of the substrate (1) and the insulating layer (3). The semiconductor layer (2) includes a plurality of pairs of barrier regions (2a) and storage regions (2b), each pair being placed under one electrode (4 or 5), each of the barrier regions (2a) being the same conducting type as the semiconductor substrate (1) and each of the storage regions (2b) being the opposite conducting type the substrate (1). Each of the storage regions (2b) is insulated from the circumferential material so that carriers transferred through the semiconductor layer (2) can be stored in the storage region (2b) upon power failure.</p> |
