发明名称 SHOOTTHROUGH FAULT PROTECTION SYSTEM FOR BIPOLAR TRANSISTORS IN A VOLTAGE SOURCE TRANSISTOR INVERTER
摘要 : Faulted bipolar transistors in a voltage source transistor inverter are protected against shootthrough fault current, from the filter capacitor of the d-c voltage source which drives the inverter over a d-c bus, by interposing a small choke in series with the filter capacitor to limit the rate of rise of that fault current while at the same time causing the d-c bus voltage to instantly drop to essentially zero volts at the beginning of a shootthrough fault. In this way, the load lines of the faulted transistors are effectively shaped so that they do not enter the second breakdown area, thereby preventing second breakdown destruction of the transistors.
申请公布号 CA1152152(A) 申请公布日期 1983.08.16
申请号 CA19800359032 申请日期 1980.08.26
申请人 BORG-WARNER CORPORATION 发明人 WIRTH, WILLIAM F.
分类号 H02H3/44;H02M1/00;H02M1/38;H02M7/537 主分类号 H02H3/44
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