发明名称 |
SEMICONDUCTOR LASER BONDING TECHNIQUE |
摘要 |
<p>A SEMICONDUCTOR LASER BONDING TECHNIQUE In a method and apparatus for bonding a semiconductor laser chip to a heatsink and testing the bond obtained, temperature in the bonding operation is regulated by passing a small fixed current through the forward biased laser and monitoring corresponding change in voltage caused by alteration of the laser pn junction temperature. Current is passed to the laser through a floating contact consisting of a conducting vacuum pick-up pressed against the laser top surface. Bond integrity is subsequently tested at low temperature by passing a dc current greater than a threshold current through the laser and measuring the resulting light output and then passing a pulsed current with identical peak current level and again measuring light output. The difference in light output is a function of the bond thermal resistance.</p> |
申请公布号 |
CA1152231(A) |
申请公布日期 |
1983.08.16 |
申请号 |
CA19810384015 |
申请日期 |
1981.08.17 |
申请人 |
NORTHERN TELECOM LIMITED |
发明人 |
DEVENYI, TIBOR F.;KOVATS, TIBOR F.I.;LOOK, CHRISTOPHER M. |
分类号 |
H01L33/64;H01S5/02;H01S5/024;(IPC1-7):H01L33/00;H01L21/66 |
主分类号 |
H01L33/64 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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