| 摘要 |
PURPOSE:To realize the advancement of recrystallization from the center of a wafer toward the periphery and thus attain the single crystallization of a non- single crystal semiconductor layer uniformly and securely, by keeping the temperature in the periphery of a wafer higher than the temperature of the center in a cooling process after beam scanning. CONSTITUTION:The periphery of a wafer is kept at a high temperature by an auxiliary heating. The rod-formed wafer 11 is advanced to directions shown by arrows and irradiated by a rod-formed beam 12. The both edge parts of the wafer 11 by arranging the auxiliary heater shown by the numeral 13, or the rod formed beam is additionally irradiated onto the position of the auxiliary heater 13. Accordingly, a liquid phase part L is generated on the surface of the wafer 11, and the part shown by the numeral 11' is single-crystallized. |
