| 摘要 |
PURPOSE:To thicken the thickness of a semiconductor substrate only by the depth section of a groove, and to improve efficiency percentages in each process of the manufacture of an element remarkably by controlling the depth of the groove formed to the semiconductor substrate. CONSTITUTION:Electrodes 22, 23 required are each formed to the surface and back of the semiconductor substrate 21, to a section in the vicinity of the surface thereof a PN junction is formed. However, depth formed to the back of the substrate in a post-process is supposed and the thickness of the semicondutor substrate can be thickned only by the depth section. The semiconductor substrate is etched conformed to the electrodes 22 to isolate the PN junctions of each element. The groove 24 surrounding the electrodes 23 is formed to the semiconductor substrate by a diamond cutter. The semiconductor substrate is etched comforming to the electrodes 23, and the substrate is isolated into separate element. A section 25 corresponding to the bottom of the groove of the semiconductor substrate may be etched for isolating the substrate into each element. |
