| 摘要 |
PURPOSE:To obtain the field-effect semiconductor device, channel length thereof is 2-3,000Angstrom and which has super-fine structure, by forming a compound semiconductor layer, a gate electrode layer, an insulating layer and a conduction type compound semiconductor region. CONSTITUTION:The n type GaAs semiconductor layer 12 having high concentration is grown onto a semiconductor substrate 11 through an organic metal chemical vapor deposition method (a MO-CVD method). The aluminum layer (the gate electrode layer) 13 is grown through the MO-CVD method. The surface of the aluminum layer 13 is oxidized through a method such as an anodic oxidation method to form the aluminum oxide layer 14. The MO-CVD method is applied, and the n type GaAs semiconductor regions 15 are grown in an epitaxial manner. An ohmic electrode metallic layer made of gold/gold.germanium is formed through normal technique, and an electrode layer 16 is formed through the patterning of the metallic layer. |
