| 摘要 |
PURPOSE:To arrange SITLs in which drain currents are lowered, and to widen the application range of the SITLs by forming at least two kinds or more of the SITLs. CONSTITUTION:The SIT 1 and the SIT 2, which has the emitter 31 of a P+ type P-N-P transistor, the collector of the P+PNP transistor, the gates 41 of the SIT and the source 51 of the N+ type SIT and in which a second channel region having impurity density lower than a channel region 2 is arranged between the gates 41 of the channel region 2, are formed onto the same substrate. The second channel region 6 can be formed by implanting elements such as boron in the quantity of dose in approximately 5X10<13> atoms/cm<3> from 5X10<10> atoms/cm<3> and implanting ions by 100klV energy. |
