发明名称 |
Monolithic integrated circuit |
摘要 |
In a semiconductor memory device of the type having PNPN elements for transferring checking and programming currents to a memory cell, and a trigger circuit for activating the PNPN elements at a predetermined potential, a voltage limiting circuit is provided to activate the PNPN elements prior to achieving the triggering potential so that large voltage spikes through the memory elements during the memory checking operation can be prevented.
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申请公布号 |
US4399521(A) |
申请公布日期 |
1983.08.16 |
申请号 |
US19800191116 |
申请日期 |
1980.09.26 |
申请人 |
NIPPON ELECTRIC CO., LTD. |
发明人 |
MASUDA, HAJIME |
分类号 |
G11C17/18;(IPC1-7):G11C11/40 |
主分类号 |
G11C17/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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