| 摘要 |
PURPOSE:To prevent the generation of foreign matter on oxidation and adhesion onto a wafer, etc. of the foreign matter and the pollution of a reactor core pipe by deposition polycrystalline silicon onto a silicide of a high melting-point metal. CONSTITUTION:The surface section of a silicon substrate 1 is oxidized selectively to form a field oxide film 2 with LOCOS structure, and a gate oxide film 2G is formed. Mo and Si are evaporated simultaneously onto the whole surface of the silicon substrate 1, and the Mo silicide 3 is formed. Polycrystalline silicon 4 is deposited onto the whole surface of the silicon substrate 1, and mask oxide films 2M are formed onto source.drain. Source.drain regions 5 are formed to the silicon substrate 1 through ion implantation phosphorus silicate glass (PSG) films 6 are deposited and flowed, Al electrodes 7 are evaporated, and shaped through photolithography, thus obtaining a MOS type transistor. |
