| 摘要 |
PURPOSE:To realize a MOSSIT, voltage amplification thereof is high, a noise thereof is high as a logic circuit and the position of an intrinsic gate thereof is easily controlled, by changing the depth direction in the vicinity of a drain into low impurity density and bringing the intrinsic gate close to the source side. CONSTITUTION:A field insulating film 6 made of silicon oxide, etc. is formed onto the main surface of a P substrate 11, and a gate insulating film 5 made of silicon oxide, etc. is formed selectively into a region in which the MOSSIT must be formed. As (arsenic) or P (phosphorus) ions are implanted and a channel region 12 is formed. P+Polycrystalline silicon or molybdenum is formed selectively onto the gate insulating film 5, and used as a gate metal 9, and openings for forming source-drain are formed selectively. A source region 3 and a drain region 4 are shaped by the introduction of As, etc. through the opening sections of source-drain. Wiring containing a contact, a source electrode 7, a drain electrode 8, etc. is executed. |
