| 摘要 |
PURPOSE:To enable to form the semiconductor surface flat in a shorter time than the time taken for an entire surface test etching by a method wherein the surface form of at least one chip of regular patterns on the semiconductor surface is tested and memorized, and, utilizing repeatedly said signal for every chip, the rate of ion beam etching is controlled. CONSTITUTION:The operating method in embodiment is as follows: supposing a semiconductor having the secion as shown in the Fig. (a) is exist, and the signal as shown in the Fig. (b) is obtained by scanning a detection beam thereon from left to right in the drawing, the signal of one period e.g. B region is memorized in a memory part. Further, the amount of control of the beam scanning speed, the beam acceleration voltage, and the beam diameter which are the external parameter for the rate of ion beam etching are controlled by the signal of the surface form, and thereby the part in the shaded part H in the Fig. (c) is etched, thus a flat surface form is obtained. |
