| 摘要 |
<p>PURPOSE:To perform the isolation due to wafer cleavage easily and securely by a method wherein a semiconductor wafer to perform cleavage is adhered on a bimetal, then the temperature is increased or decreased, then the cleavage is provided by concentrating the stress at the very small damaged part perviously provided in the neighborhood of the end surface of the semiconductor wafer due to the deformation of the bimetal, and finally the wafer is exfoliated from the bimetal. CONSTITUTION:When the bimetal 3 whereon the wafer 1 is adhered is heated, and thus the temperature is increased, the bimetal 3 deforms so that the side of a material 6 of large coefficient of thermal expansion becomes projected, then the stress generated by its strain concentrates at the part of the very small damage 2 which gives the starting point of cleavage previously provided in the neighborhood of the end surface of the wafer 1, and accordingly a cleavage line runs from this part resulting in cleavage. After this cleavage is finished, the bimetal 3 whereon the wafer 1 is adhered is cooled, and the bimetal 3 is exfoliated from the wafer 1 for semiconductor laser which is cleaved by using organic solvent.</p> |
