| 摘要 |
PURPOSE:To easily realize a semiconductor IC having a structure of element isolation wherein there exist no unevennesses of the surface and the restriction to the finer formation of pattern is not caused by a method wherein a groove is formed on the element isolation region, then this groove is filled with insulation substance having viscosity, and is hardened. CONSTITUTION:An oxide film 2 is formed over the entire surface of a semiconductor substrate 1. Next, when the insulation substance 50 having viscosity such as polyimide resin is coated, the groove 40 is perfectly filled, and the surface becomes flat, since the polyimide resin is polymer material and has viscosity. Thereafter, after the polyimide resin 50 is hardened by a method of a heating or a light irradiation, the polyimide resin 50 is removed by an etching until the oxide film 2 on the main surface of the substrate 1 is exposed, and accordingly the surface of the polyimide resin 50 filling the groove 40 and the surface of the oxide film are formed into the same plane. |
