| 摘要 |
PURPOSE:To prevent deterioration of characteristic by forming strain breeding region on an Si layer generating a fault induced by heat treatment formed therein through introduction of an element having the covalent radius different from that of Si into both main surfaces of the Si wafer. CONSTITUTION:A fault induced by heat treatment is generated on an Si wafer 1 by a first heat treatment. A second heat treatment is executed and fault induced by heat treatment is removed by out-diffusion from both main surfaces of the Si wafer 1. Thereby, a fault-free Si layers 3, 4 and the Si layer 5 generating fault induced by heat treatment are formed. Thereafter, Sb-introduced layers 10, 11 are formed by introducing Sb into a part of the fault-free Si layers 3, 4. At this time, the strain breeding regions 12, 13 are formed by the pushing effect of lattice strain of the Sb and Si atoms. Next, a source region 6 and a drain region 7 are formed in the region (a) of the fault-free Si layer 3. |
