| 摘要 |
PURPOSE:To increase the area of an electrode without increasing the area of a plane by using the side wall section of a groove dug into an Si substrate as the electrode surface of a capacitor. CONSTITUTION:A field SiO2 film 11 is formed selectively onto the Si substrate 10 through a LOCOS method, the etched groove 17 is formed into the substrate 10, and a capacitor insulating film 19 made of Si3N4 is shaped onto these surfaces through a CVD method. The whole surface of the insulating film 19 is coated with the plate 8 represented by polycrystalline Si. The groove 17 is buried with the same polycrystalline Si 82 at that time. The plate 8 is oxidized and a first inter-layer oxide film 13 is formed, the Si3N4 film 19 and an SiO2 film 18 are removed while using the oxide film 13 as a mask, and a gate oxide film 12 is formed through oxidation. A predetermined section is coated with a word line 4, and source-drain layers 15 are formed to a section not coated with the plate 8 and the gate 4 through ion implantation, and a second inter-layer insulating film 14 and the electrode 30 are coated selectively. |
