| 摘要 |
PURPOSE:To make easy formation of metal wiring layer and to easily obtain a blanked contact by filling silicon film in the desired shape only to the flat aperture part of a silicon semicondctor device. CONSTITUTION:An N type diffusion layer 1' is formed on the main surface of P type silicon semiconductor substrate 1. In the structure where a silicon semiconductor thin film is composed of an N type polycrystalline silicon electrode 2, a polycrystalline silicon wiring layer 2 and an insulating film 3, a photo resist 4 is formed in order to form a contact aperture of inslating film 3, etching is carried out and a vertical contact aperture is formed in the same diameter as the contact pattern on which an insulating film of the specified section is formed by the photo resist. An amorphous silicon 9 is deposited on the surface while the resist 4 is being left. Next, the resist 4 is lifted off and the silicon film 9 at the surface of resit is removed together with the resist 4. Next, a metal wiring layer 6 is formed. |
