| 摘要 |
<p>PURPOSE:To realize a high-speed operation of reading and to avoid ineffective current consumption, by providing a clamping MOSFET to a data line and at the same time by giving a common connection to the source of a storing MOSFET of the column direction to have an earth connection via the MOSFET. CONSTITUTION:A data line contains clamping MOSFETQ31, Q32..., and the level of the data line never drops down to a low value like an earth potential although a storing MOSFETQM is turned on to the selection of word line. As a result, the signal amplitude of both the data line and common data line can be set at the minimum necessary level although the inverted reading of a high level is performed after reading of a low level in an optional order of addresses. This enables reading at a high speed. While the source of the FETQM of the column direction is connected in common and is grounded via switching MOSPFETQy1', Qy2,.... Then in case a word line is selected, and a data line is not selected, FETQy1'... are turned off although the FETQM is turned on to avoid ineffective current consumption.</p> |
