| 摘要 |
PURPOSE:To equally sustain resistance within a wafer by mechanically and chemically polishing and removing wafer surface after the heat treatment to a bulk crystal in the wafer condition at a specified temperature for the minimum processing period determined in accordance with temperature. CONSTITUTION:Gallium (Ga) and arsenic (As) in the purity of 99.99999% are directly combined with the equivalent ratio by the liquid sealed lifting method. A quartz furnace core tube 2 is inserted into an electric furnace 1, the hydrogen gas is supplied into the furnace core tube 2 at a rate of 2l per minute. A GaAs wafer 4 is placed within a quartz boat 3 and is subjected to the heat processing at a temperature of 600-900 deg.C, for example, at 850 deg.C for an hour. Thereafter, surface of wafer 4 is chemically removed by polishing for 50mum. |
