| 摘要 |
PURPOSE:To prevent penetration of infrared rays into a comparatively deep region, and to prevent destruction of a circuit element formed already in a substrate at the annealing process of the seimconductor layer according to irradiation of infrared rays by a method wherein infrared rays having the prescribed wave length or more are intercepted. CONSTITUTION:A filter 3 is provided between an infrared rays source 2 and the substrate 1 to cut the unnecessary wave length regions. The numeral 4 shows a mirror for convergency of infrared rays on the surface of the substrate. Because infrared rays cut by the filter 3 contain the wave length regions having high heating efficiency, and the temperature rise of the filter absorbing infrared rays thereof is remarkable, the filter is cooled according to the ventilation, etc., so as not to redischarge infrared rays of the long wave lengths. The filter to cut infrared rays on the long wave length side is manufactured according to the method as follows. Glass containing a metal element of a comparatively large quantity absorbs light of the wave length peculiar to the metal element thereof. Accordingly, when the filter is formed of glass containing a properly selected metal, the filter having the desired characteristic can be obtained. |
