发明名称 PYROELECTRIC INFRARED RAY DETECTOR
摘要 PURPOSE:To increase the adhesion of a photodetecting electrode to a pyroelectric body and at the same time to prevent deterioration of said electrode due to the surface oxidation to improve reliability of a pyroelectric infrared ray detector, by coating a protective film made of a silicon thin film over the photodetecting electrode of a pyroelectric element. CONSTITUTION:A pyroelectric chip, i.e., a pyroelectric element 10 which is obtained by coating a protecting silicon thin film over a photodetecting electrode, an FET12, an input resistance chip 13 and an output resistance chip 14 are attached by an adhesive on a basement 11. The basement 11 has a silicon window material 15 and is sealed with a shell 16 to keep the prescribed atmosphere at the inside the basement 11. The infrared rays are made incident through the window 15 and absorbed by the photodetecting surface of the element 10. As a result, the element 10 has a temperature change to generate the corresponding electric charge. This electric charge is led to the FET12 to undergo an impedance conversion and then extracted outward as signals through a lead terminal 17.
申请公布号 JPS58135427(A) 申请公布日期 1983.08.12
申请号 JP19820017303 申请日期 1982.02.05
申请人 TOKYO SHIBAURA DENKI KK 发明人 FUKUDA KATSUYOSHI
分类号 G01J5/02;G01J5/34 主分类号 G01J5/02
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