| 摘要 |
PURPOSE:To obtain a semiconductor device available to a high speed operation and a high density formation by a method wherein the thickness of a P-N junction depletion layer is changed by a gate electrode, and thus the tunnel current or the avalanche current flowing through the junction is controlled. CONSTITUTION:When the absolute value of the voltage of the gate electrode 5 is small, and the high density carrier region of an accumulation layer or an inversion layer is not formed on the surface of a substrate, a thick depletion layer is formed in the substrate 11 at the P-N<+> junction between the substrate 11 and a drain 14, and accordingly the current (drain current) between the source 12 and the drain 14 does not flow. When a sufficiently large negative voltage is impressed on the gate electrode 5 resulting in the formation of the hole accumulation layer on the surface of the substrate, the depletion layer for the most part does not expand, then the carrier can pass through the tunnel when the width becomes several ten Angstrom or less, and the avalanche is caused when the field becomes 10<5>V/cm or more even with the depletion layer width over that, and accordingly the current flows between the source 12 and the drain 14. |
