| 摘要 |
PURPOSE:To reduce the area occupied by resistors in an IC device and contrive further higher density and larger integration, by arranging thin film resistors in vertical type or three dimensions to the main substrate for IC constitution. CONSTITUTION:A thick insulation film 2 constituted of an SiO2 is formed on the P type Si substrate 1, then holes are opened by an automatic etching technique, etc., and a prescribed N type conductive impurity is diffused from hole parts into the Si substrate resulting in the formation of wiring layers 3, etc. On the side wall part of holes, the thin film resistors 4 and 5 constituted of CrSi (chrome silicide) are formed by an oblique evaporation method or a chemical evaporation method. Thus, thin film resistors in vertical type or three dimensional arrangement are constituted by contacting the side wall of uneven parts of an insulator or an insulation film to resistors, and the upper and lower part thereof to wiring layers. |
