| 摘要 |
PURPOSE:To realize a high accuracy fine device, by contriving that the dimension and the position of a gate oxide film and a source, drain contact hole are determined in self-alignment by mask processes at least three times. CONSTITUTION:An oxide film 5, a nitride film 6 and an oxide film 7 are deposited on an N type substrate 10 surface, and, with a resist layer 8 as a mask, ions are implanted resulting in the formation of a P<+> drain and source regions 11 and 12. An Si thin film is deposited, thus the resist layer 8 is removed, and Si thin films 19 and 29 are left, accordingly nitride films 16, 26 and 36 are left by etching the nitride film 6. A selective oxide film 15 is provided on a field part, then the Si thin films 19 and 29 and the nitride film 36 are removed, and accordingly a gate oxide film 4 and a gate electrode 3 are formed. The nitride films 16 and 26 and the oxide film thereunder are removed in self-alignment, and contact holes CD and CS are provided resulting in the formation of drain, source electrodes 1 and 2. |
