| 摘要 |
PURPOSE:To prevent deposition of silicon into aluminum electrode wirings by a method wherein the aluminum electrode wirings having a polycrystalline silicon layer doped with phosphorus at the lower layer are connected ohmically to a P type semiconductor substrate. CONSTITUTION:A second insulating film 9 is formed on the P type semiconductor substrate 1 to be processed whereon a P type substrate contact region 3 is demarcated to be indicated by a first insulating film 4, and electrode windows 10a, 10b to expose a part of an active region 2, and a substrate contact window 11 to expose the P type substrate surface at the P type substrate contact region 3 are formed therein. Then a non doped polycrystalline silicon layer 13' is formed on the semiconductor substrate 1 to be processed, and phosphorus is doped according to ion implantation. Then the polycrystalline silicon layer 13 doped with phosphorus is annealed, the polycrystalline silicon layer 13 doped with phosphorus in the substrate contact window 11 is removed selectively, and moreover after the second insulating film 9 and the first insulating film 4 left at a part of the inside of the contact window 14 are removed, an aluminum layer 17 is formed on the semiconductor substrate 1 to be processed, and then the said aluminum layer 17 and the polycrystalline silicon layer 13 doped with phosphorus at the lower part thereof are patterned to form the aluminum electrode wirings 18a, 18b, and 19. |
