| 摘要 |
PURPOSE:To eliminate the area increase due to the provision of an input-protection circuit and bad influences when formed in high integration, by forming an input protection diode utilizing an emitter resistance region connected to an input transistor. CONSTITUTION:An N type epitaxial layer region 8b wherein a P type resistance diffused region 9b electrically connected to the N<+> type emitter diffused region 10 of the input transistor 3 is built in is electrically connected to an input terminal 1 together with a base region 9a. The P-N junction formed by a P type Si substrate 6 and the N type eiptaxial layer region 8b and the P-N junction formed by the P type resistance diffused region 9b and the N type epitaxial layer region 8b are used as the protection diode. Since the resistance region 4 is utilized, the junction area is large, and the current concentration can be reduced, thus a large protective function can be obtained. |
