| 摘要 |
PURPOSE:To reduce the junction capacity of a junction resulting in the improvement of the high speed property of signal treatment, by forming a shallow emitter region using a poly Si layer as the diffusion source of high density As. CONSTITUTION:To an Si oxide layer 7 covering the upper surface of a base region 4, a hole is opened at an emitter region 5 formation scheduled region, and the first poly Si layer 11 with As doped at high density is adhered. The second poly Si layer 12 within the range 49-85% of the As density in the first poly Si layer 11 is formed slightly thicker than the first poly Si layer 11 and heated, and accordingly the emitter region 5 without crystal defects is formed. |
