| 摘要 |
PURPOSE:To shorten the exposing time length of the electron beam by a method wherein the region on a material to be exposed is divided imaginarily into the central part and the circumferential part, the condition of irradiation is changed, and an electron beam current is increased when the circumferential part is to be exposed. CONSTITUTION:When the chip 16 is to be exposed, the pattern is divided imaginarily into the three regions A, B, C previously according to the boundaries shown with dotted lines in the figure, and exposure data corresponding to the said divided regions are inputted to a controller 5. Extremely minute circuit patterns 17 are contained in the said region A, conductor patterns 19 connected to the said circuit patterns 17 are contained mainly in the region B outside of the said region A, and pad patterns 18 and a part of the conductor patterns 19 are contained in the said region C. A control signal is supplied from the said controller 5 to a magnifying power variable circuit 12 at first as to make the scanning range of the electron beam to become as the region A, and the patterns contained in said region A are exposed selectively according to vector scanning of the electron beam. After exposure of the region A is completed, the magnifying power variable circuit 12 is controlled to change the scanning range of the electron beam to the range to cover the region B. |
