SEMICONDUCTOR NON-VOLATILE MEMORY

摘要

PURPOSE: To simplify the peripheral circuit of a semiconductor nonvolatile memory by a method wherein the voltage value impressed on a control gate electrode controlling the electrode potentials in the case of charging electrons to a floating gate electrode is equalized to the value of voltage impressed on an erasing electrode in the case of discharging electrons from the floating gate electrode. CONSTITUTION:A source region 2 and a drain region 3 both in N<+>region are formed on the surface of a P type semiconductor substrate 1 while a floating gate electrode 5 is provided through the intermediary of a gate oxide film 4. A control gate electrode 7 and an erasing electrode 9 are provided on the floating gate electrode 5 respectively through the intermediary of an insulating film 6 and a thin oxide film 8. The writing-in a semiconductor non-volatile memory depends on the voltage VFG of floating gate electrode 5 while the VFG is actually controlled by the voltage VCG of control gate electrode 7. In other words, the voltage VCG of control gate electrode specified to be VCG(>20V) is lowered down to be VCG=20V by increasing the capacity between the control gate electrode 5 and the floating gate electrode 7 so that said voltage VCG=20V may be equalized to the voltage of erasing electrode VEG=20V in case of erasing. Through these procedures, the peripheral circuits of semiconductor non- volatile memory can be simplified.