发明名称 FORMATION OF NITRIDE THIN FILM
摘要 PURPOSE:B and a substance capable of converting B into its nitride are separately or, after mixed, deposited on the substrate in an atmosphere of at least one of nitrogen gas or ammonia gas to form nitride thin films free from damage on running, because of their increased lubricity. CONSTITUTION:For example, a magnetic layer 2 is formed on a substrate 1 made of a synthetic resin film such as polyester or polypropylene by metallization of electromagnetic metal such as Co or Ni. Then, B and at least one capable of converting B into its nitride such as V, Mo, Ti, Zr, Hf, Cr, Al, Mg, or Si are put in different evaporators respectively or are mixed and placed in the same evaporator. And they are vaporized in an atmosphere containing at least one of nitrogen or ammonia gas to effect metallization of the nitride on the magnetic layer 2 to form the nitride thin film 3.
申请公布号 JPS58135111(A) 申请公布日期 1983.08.11
申请号 JP19820014896 申请日期 1982.02.03
申请人 HITACHI CONDENSER KK 发明人 MATSUZAKI SOUICHI;OSADA MINORU;YASUI SEIJI
分类号 G11B5/72;C01B21/06;C01B21/064;C10M103/00;C10M177/00;C10N40/18;C23C14/06;C23C16/34;G04B31/08;G11B5/84 主分类号 G11B5/72
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