| 摘要 |
PURPOSE:To prepare a growing solution of a binary compound crystal of accurate composition, by sliding a table for holding a solution having a solution reservoir on a support having small holes for dividing small grains and a hole for source substrate. CONSTITUTION:Many small holes 2 for dividing small grains and a hole 3 for a source substrate 10 are provided on a support plate 1, and a solution reservoir 5 is provided in a table 4 for holding the solution to form a boat for the growing solution. The source substrate 10, e.g. InP, is placed on the hole 3 for the substrate of the support plate 1, and In 11, etc. is then introduced into the solution reservoir 6 of the table 4 for holding the solution and placed in a heating furnace in an atmosphere, e.g. hydrogen. The table 4 for holding the solution is then slidden to make the source substrate 10 opposite to the solution reservoir 5. P in the source substrate plate 10 is then molten in the In to the saturation to form a saturated solution of P. The table 4 for holding the solution is then slidden further to distribute the solution 11 in the small holes 3 for dividing small grains of the support plate 1, and the solution 11 is cooled to give small grains of InP saturated with the P. The resultant small grains are used as a growing solution to carry out the epitaxial growth and give a uniform gorwth layer. |
