发明名称 |
GEGEN GALLIUMARSENID-LASERSTRAHLUNG EMPFINDLICHER PHOTOLEITER |
摘要 |
<p>An improved photoconductor for GaAs laser addressed devices sensitive to illumination at about 1.5 eV is an amorphous material containing silicon, hydrogen and a material taken from the group consisting of Ge, Sn and Pb. A preferred embodiment of this invention is amorphous SixGe1-xHy where x equals 0.78 to 0.93 and y equals 14-20 atomic percent.</p> |
申请公布号 |
AT371949(B) |
申请公布日期 |
1983.08.10 |
申请号 |
AT19780009345 |
申请日期 |
1978.12.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
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分类号 |
G03G5/08;H01L31/0248;H01L31/0376;H01L31/09;H01L31/20;H01S5/00;(IPC1-7):01L31/08 |
主分类号 |
G03G5/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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