发明名称 |
Crystallographic etching of III-V semiconductor materials |
摘要 |
Crystallographic etching in III-V semiconductor materials such as GaAs is achieved, for example, by utilizing a suitable halogen containing entity such as chlorine, bromine and iodine. This crystallographic etching yields in one embodiment essentially vertical surfaces of optical quality. Therefore, the procedure is useful in fabricating integrated circuits and in producing optical devices.
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申请公布号 |
US4397711(A) |
申请公布日期 |
1983.08.09 |
申请号 |
US19820432317 |
申请日期 |
1982.10.01 |
申请人 |
BELL TELEPHONE LABORATORIES, INCORPORATED |
发明人 |
DONNELLY, VINCENT M.;FLAMM, DANIEL L.;IBBOTSON, DALE E. |
分类号 |
H01L21/306;(IPC1-7):H01L21/30;B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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