| 摘要 |
PURPOSE:To reduce the residual internal stress of a magnetic substance layer and to manufacture a head with high performance, by forming a magnetic substance layer at a temperature at which the residual stress is a true stress mainly and annealing the layer at a temperature lower than the recrystallizing temperature of the magnetic substance layer. CONSTITUTION:As a base 1, 0.2mm. thick silicon wafer is used and a permalloy film, 2mum thick is formed with the planer magnetron type sputtering device under 5X10Torr. Ar gas pressure as the magnetic substance layers 2, 6. The forming of the layers 2, 5 is done by keeping the temperature of the base 1 to 100 deg.C. Other conditions are the same as conventional methods. As to the samples obtained as above, annealing is done for two hours under 5X10Torr. vacuum at 250 deg.C, 300 deg.C, 350 deg.C and 500 deg.C. |
