| 摘要 |
On a mask to be used in fabrication of semiconductor integrated circuits is formed an electrode outside of an integrated circuit pattern area with the same material as said pattern area in the same thickness as said pattern area, this mask is positioned above a wafer as separated therefrom at a minute gap distance, and the gap distance between the mask and the wafer is measured by detecting an electrostatic capacitance between the electrode and the wafer.
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