| 摘要 |
PURPOSE:To form a heat proof Schottky junction with excellent reproducibility by using Pt as a gate electrode metal and utilizing solid phase reaction between said Pt and GaAs. CONSTITUTION:The Si<+> ion is implanted to a semi-insulating GaAs crystal substrate 21 using a mask 22 and an active layer 23 is selectively formed by annealing the surface. Then, a gate electrode 24 is formed by vacuum deposition of Pt as a gate metal material and the Si<+> ion is implanted with said Pt used as the mask. Thereby, the self-aligned implanting layers 25, 26 are formed on the electrode 24. When this sample is heat processed, the electrode 24 reacts with the GaAs, producing a compound 27. Impurity of layers 25, 26 are activated by heat processng under a raised temperature and thereby a source region 25' and drain region 26' are formed. |
