| 摘要 |
PURPOSE:To realize high integration density and high speed operation of a bipolar transistor by forming the emitter region an external base region on the self-alignment basis in such a way that these regions are not in contact each other. CONSTITUTION:An oxide film 12 is formed on a semiconductor layer 11 which will become an n type collector region and thereafter an n<-> type internal base region 13. Then, a photo resist pattern 14 is selectively formed on the oxide film 12, and a base region 15 is formed by implanting ions at a high dosing amount. In succession, a device is exposed to a reactive gas in view of contracting dimensions of photo resist pattern 14, only the oxide film 12 under this pattern 14' is removed by etching and an aperture 16 is formed. An n<+> type emitter region 17 is formed through such aperture 16. Therefore, the emitter region 17 and base region 15 can be formed on the self-alignment basis. |
