| 摘要 |
PURPOSE:To simplify a manufacturing process and lower a noise level by a method wherein silicon ions are first implanted in a region containing impurities before or after the process of ion implantation and a projected portion is formed by epitaxially grown silicon ions. CONSTITUTION:A buffering oxide film 2 having predetermined thickness is formed on, for instance, an N conductive type semiconductor substrate 1. Subsequently, a resist film 3 to be used as a maak when ions of impurity are implanted is formed thereon. A window 4 is opened in the resist film 3 by means of photoetching in a region correspondent to a region 8a where a region containing impurities are to be formed on the substrate 1. Then after silicon ions 5 are implanted therein with the resist film 3 as a mask, boron ions 6 as impurities are implanted with the resist film 3 as a mask. Heat treatment is applied to activate the silicon ions 5 implanted in the region 8a and a projected portion 7 is formed by epitaxially grown silicon ions. After this, a region 8 containing impurities is formed to remove the resist film 3. |
