| 摘要 |
PURPOSE:To prevent a mask wafer from being damaged by a method wherein, after coating wafer with positive type photoresist, a scribe region comprising grid-like sinking grooves is formed on the surface of a wafer making use of a mask provided with crosswise grid-like transparent region. CONSTITUTION:The oxide film 6 and nitride film 7 are formed on the flat wafer 5. Next the nitride film 7 is covered with positive type photoresist film 8 on which the mask 9 is exposed by means of approaching or projecting process. The mask 9 comprises a flat and transparent glass 10 and chromium film 11 partly shutting off light on the surface of the glass 10. After the exposure, the photoresist film opposing to scribe lines is removed by means of developing the wafer 5. Next the lower nitride film 7 is removed by plasma etching making use of Freon gas utilising residual photoresist film 8 on the surface of wafer 5 as a mask. The conventional first patterning may be performed on this wafer 5. |
