| 摘要 |
PURPOSE:To quickly form an excellent epitaxial grown layer of InP series by mixing gases in the neighborhood of a substrate for growing in the compound semiconductor growth method. CONSTITUTION:A gas supply tube 13 for organic metal such as TEI is used to supply gas to a furnace core tube 1, whereas a gas tube 14 positioned outside the gas supply tube 13 is employed to lead PH3, etc. to a gas mixing apparatus 15. TEI is mixed with PH3 in the region 16 located at the edge of the substrate of the gas mixing apparatus 15. A high frequency heating coil 17 is mounted in the region covering a substrate 9, a susceptor 8 and the gas mixing apparatus 15. PH3 introduced in a heated condition at high temperatures through the gas supply tube 14 is thermally decomposed in the region 18 belonging to the gas mixing apparatus 18 and decomposed P and In of TEI react on each other in the region 16, so that InP is formed on the substrate 9. |
