| 摘要 |
PURPOSE:To make a crystal axis fixed by the method wherein an insulating film with a rectangular opening made in a semiconductor substrate is first provided and polysilicon or amorphous silicon is made to stick onto the insulating film and the opening and then rays of light or electron beams are irradiated thereon to make the polysilicon or amorphous silicon single crystalline. CONSTITUTION:An insulating film such as an oxide film or nitride film having a rectangular opening 30 is provided on a p type Si substrate 10. The opening 30 is about 1mum in size and a side of the rectangle is so provided that it is in parallel with the direction (100) of the substrate 10. Then, a film 40 made of polysilicon (polycrystalline) or amorphous silicon is made to stick to the whole surface and patterning is added so as to shape the film into an island of suitable size. Next the film 40 is made single crystalline by irradiating laser or electron beams. By so doing, the crystal axis of the crystal that has been made single crystalline conforms to that of the substrate 10 and is settled so that it points to a fixed direction. |
