| 摘要 |
PURPOSE:To form a fine pattern with high resolution by a method wherein first and second resist layers are applied onto a semiconductor in order and, after the second layer is exposed and developed and then the surface of the first layer is changed in property, a resist layer located in an area other than the exposed one is removed. CONSTITUTION:A negative type resist PGMA as a first resist layer and a positive type PMMA as a second resist layer 3 are applied to a substrate 1 formed of a semiconductor, an insulator or metal. Subsequently, the second resist layer 3 is exposed and developed to form a predetermined pattern and to form an exposed surface 4 of the first resist layer, before being soaked in thick sulfuric acid. When both resist layers 2, 3 having predetermined patterns are exposed to oxygen plasma, the first and second resist layers 2, 3 located at positions other than the exposed surface 4 of the first photresist layer 2 are removed, so that the first resist 2 layer is allowed to form the predetermined pattern 5. |
