| 摘要 |
PURPOSE:To form shallow emitter base junction with good controllability at a low temperature by snow raking effect during heat processing. CONSTITUTION:An oxide film part 5 on a base region 7 is removed by etching, a platinum layer 11 is vacuum deposited after opening a contact hole 10 and thereafter heat processing is carried out. At this time, the Pt layer 11 connected to the base region 7 becomes PtSi layer and a base contact region 12 is formed, and arsenic doped polycrystalline silicon patterns 91, 92 are converted respectively to the PtSi layers 131, 132. The arsenic in the arsenic doped polycrystalline silicon patterns 91, 92 is swepted out in high concentration by the snow raking effect to a part of the surface of base region 7 and epitaxial layer 3 and thereby the n<+> type emitter region 14 and n<+> type collector leadout region 15 are formed. Thereby, the preformed p type base region 7 is prevented from spreading in the depth and lateral directions. |
