| 摘要 |
PURPOSE:To obtain a semiconductor device which turns ON and OFF by providing a photo-transistor to the cathode of a photo-thyristor. CONSTITUTION:The emitter layer 9 of a photo-thyristor 1 having four-layer structure of PNPN and a light sensing part 9 is formed like a land and provides with a cathode electrode 10 at the upper surface. An auxiliary electrode 3 is provided at a P base layer 11 and the diode chips 4, 5 are stacked thereon and bonded by brazing. At the upper surface of cathode electrode 10, a collector electrode 13 of a photo transistor 2 having a light sensing part 12 is connected, while an emitter electrode 14 is connected with the cathode electrode 16. This device turns ON when the lights 6, 7 are irradiated and turns OFF when irradiation of light 7 stops. |
