| 摘要 |
PURPOSE:To obtain an electrophotographic receptor, etc. having high sensitivity, and excellent photoelectric characteristics and durability by forming an amorphous silicon layer contg. C on the surface of amorphous photoconductive silicon layers having a layer area contg. O and the group III atoms of periodic table at specific thickness on the conductive substrate side. CONSTITUTION:Amorphous photoconductive silicon layers 102 contg. >=1 kind H and halogen are formed on a conductive substrate 101 in such a way as to hold the relation tB/(T+tB)<=0.4 where the thickness of the area 104 of the two layers consisting of a layer area 103 contg. O and, Ga, etc. of the group III atoms of periodic table and a layer area 105 contg. only the B, etc. and contg. no O on the substrate 101 side is defined as tB and the thickness of a layer area 106 contg. neigher O nor B, etc. as T. An amorphous silicon layer 107 contg. C is formed on the layer 102, whereby a photoconductive member (electrophotographic receptor, etc.) 100 is obtained. Thus, the member 100 which is improved in the abrasion resistance, moisture resistance, etc. of the surface 108 and has good durability is obtained. |
