| 摘要 |
PURPOSE:To inhibit the generation of leakage currents by forming an oxidation-resistant mask made of silicon nitride onto an oxidizable material layer on a substrate, selectively oxidizing the material layer and removing at least one part of the residual material layer under the layer. CONSTITUTION:Boron ions are implanted into the n type single crystalline silicon substrate 1, a p-well 2 is formed, and a polycrystalline silicon layer 4 is deposited onto a thermal oxide film 3. Silicon nitride layers and SiO2 layers are deposited onto the layer 4 in succession, boron ions are implanted into the element region prearranged section of the substrate 1 and the element region prearranged section of the p-well 2, and p<+> type channel stoppers 9... are formed. The polycrystalline silicon layer 4 is oxidized selectively while using the silicon nitride layers 51, 52 as masks. The element regions of the substrate 1 and the p-well 2 are exposed, and thermally oxidized, inter- element isolation films 12... are formed and gate electrodes 131, 132 are formed to oxide films 111, 112 isolated, gate oxide films 141, 142 are formed while using the gate electrodes as masks, and boron ions are implanted selectively into the n type single crystalline silicon substrate 1 to manufacture a p channel MOS transistor while arsenic ions are implanted selectively into the p well 2 to manufacture an n channel MOS transistor. |
