| 摘要 |
PURPOSE:To offer the semiconductor device having reduced defect density to be generated in a protective film, having strong structure against external force and having enhanced reliability by a method wherein a cryogenic plasma silicon nitride film is used for the protective film, and film thickness thereof is made thickner than the thickeness of the electrode wiring film of its ground. CONSTITUTION:The figure shows four layers structure of a silicon substrate 11, an SiO2 film 12, the Al electrode wiring film 13 (film thickness is 1.0mum), and the cryogenic plasma silicon nitride film 14 as the protective film. At structure like this, film thickness of the cryogenic plasma silicon nitride film 14 is changed to 0.5-1.5mum, and the result obtained by examining intensity of the film itself applying load according to a Knoop indenter 15 is shown in the figure. The fact that the incident ratio of defect is reduced when the cryogenic plasma silicon nitride film 14 is made thick can be understood clearly from the figure thereof. While when simulation of stress at blade molding time in the actual assembling process is performed, the fact that the critical load exists at 4g has been proved. Accordingly it is necessary to form film thickness of the cryogenic plasma silicon nitride film 14 at the upper layer of Al electrode wiring film 13 to 1.2mum or more. |
