| 摘要 |
PURPOSE:To die bond a semiconductor element on a substrate by a method wherein semihardened thermosetting resin is provided on the back side of the semiconductor element, the semiconductor element is thermo-press welded on the semiconductor substrate such as a substrate or a lead frame through the intermediary of said resin. CONSTITUTION:After the thermosetting resin has been applied to the reverse side of the semiconductor element, a heat treatment is performed at the proper temperature at which the resin will not be hardened completely, at 80-150 deg.C of polyinide resin for example, for 3-60min. The film thickness of the resin is ordinarily 5-100mum, but the desirable thickness is 10-20mum. After the above thermopsetting of semihardened type has been provided, the semiconductor element is thermo-press welded to the substrate, and a die bonding is performed after the resin has been hardened completely. The condition of thermo-press welding, when polyimide resin is used, is 200-400 deg.C, 1-20kg/ cm<2> and 2-60sec in general. As the die-bonded semiconductor element has strong adhesive strength with the substrate and also has excellent heat-resisting property of bonded layer, there generates no troubles such as coming off of an element and the like in the process subsequently performed such as wire bonding and the like. |
