| 摘要 |
PURPOSE:To obtain the semiconductor laser having a stable lateral oscillating mode with extremely excellent reproducibility and with high yield through only once epitaxial growth process by forming a semiconductor layer, an energy gap thereof is smaller than an active layer, onto a substrate in a concave shape at a deep groove section reaching the substrate and thickly growing the active layer onto the groove. CONSTITUTION:The striped groove 103 is formed to the semiconductor substrate 101 in approximately 1.5mum depth and 2mum width while penetrating a Zn diffusion layer 102 in parallel in the <011> direction through photolithography. An n-In0.66Ga0.34As0.74P0.26 layer 104 in 1mum thickness in a flat section, an n-InP buffer layer 105 in a shape that is 1mum thickness in a flat section and is slightly concave in the upper section of the groove 103, the nondoped In0.72Ga0.28As0.61 P0.39 active layer 106 in 0.15mum in the upper section of the groove 103 and 0.1mum in a flat section, a p-InP clad layer 107 in 2.5mum and a p-In0.85Ga0.15As0.33 P0.67 electrode layer 108 in 1mum are laminated in succession through a liquid epitaxial growth method. |
