| 摘要 |
PURPOSE:To realize extremely high efficient buried type single axis mode oscillation without damaging characteristics by forming uneven periodic structure, a period thereof is integral times as long as one half oscillating light wavelength in an active layer, to the side surface of a mesa stripe in the buried type semiconductor laser. CONSTITUTION:First and second grooves 151, 152 with 5mum width and 3mum depth are formed to a semiconductor wafer 1, in which an n-InP buffer layer 102, the InGaAsP active layer 103 of 1.5mum oscillating wavelength and a p-InP clad layer 104 are grown onto the n-InP wafer 101 of a (100) face orientation in an epitaxial manner in succession, through etching in parallel in the <011> direction so that the mesa stripe 105 emitting light and recombining at the center is left and the uneven periodic structure of the 0.95mum period is formed to the side surface of the mesa stripe 150, a p-InP current block layer 105 and an n-InP current block layer 106 are grown in an epitaxial manner in sequence with the exception of the upper surface of the mesa stripe, and a p-InP buried layer 107 and a p-InGaAsP layer 108 are grown onto the whole surface. |
