Photoconductive substrate having amorphous silicon matrix - contg. zone doped with hydrogen or halogen and Gp=III or Gp=V element

摘要

3.2.82(x2), 8.2.82,10.2.82(x2), 2.3.82, 3.3.82(x4), 4.3.82(x2)-DE-014552, 016173, 016174, 018420, 020239, 020990/1, 033504, 033291/2/3/4, 034207/8) Photoconductive element has a substrate and a photoconductive amorphous layer with a Si matrix contg. H and/or halogen atoms. The amorphous layer has a first zone contg. O atoms and a second zone contg. atoms of a gp. III or V element on the substrate side. These 2 zones (partly) form a common zone and satisfy the requirement of tB/(T+tB) having a value of max. 0.4 (where tB is the thickness of the second zone and T is the difference between the thickness of the amorphous layer and tB). The element is sensitive to UV-, visible light, IR-, x - and gamma-radiation. It is useful in scanners, electrophotographic copiers or manuscript readers. It has constant stable electrical, optical and photoconductive properties, very good resistance to light, fatigue, excellent durability and resistance to moisture and (almost) no residual potential.